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US 7,583,126 B2Granted
Apparatus and method for preventing current leakage when a low voltage domain is powered down
AssigneeNVIDIA Corporation
InventorsGe Yang, Hwong-Kwo Lin, Charles Chew-Yuen Young
Life of this patent
Estimating the term…
Abstract
An apparatus and method are provided for preventing a current leakage or direct current when a low voltage domain is powered down. Included is a voltage transition circuit connected between a low voltage domain and a high voltage domain. Such voltage transition circuit includes a circuit component for preventing a current leakage when the low voltage domain is powered down.
Claims18
An apparatus, comprising:
- a voltage transition circuit connected between a low voltage domain and a high voltage domain, the voltage transition circuit including a circuit component for preventing a current leakage or direct current when the low voltage domain is powered down;
- wherein the voltage transition circuit includes an input-falling-transition circuit, the input-falling-transition circuit comprising:
- a p-type transistor;
- and
- an n-type transistor having a drain connected to a drain of the p-type transistor at a contact point, a source connected to a single-rail input, the p-type transistor having a source connected to a VDDH voltage of the high voltage domain;
- wherein the n-type transistor has a gate connected to a power down input.
3 more elements
An apparatus, comprising:
- a voltage transition circuit connected between a low voltage domain and a high voltage domain, the voltage transition circuit including a circuit component for preventing a current leakage or direct current when the low voltage domain is powered down;
- wherein the voltage transition circuit includes an input-rising-transition circuit, the input-rising-transition circuit comprising:
- a first n-type transistor having a gate connected to a single-rail input, the first n-type transistor having a source connected to a ground voltage, and a drain connected to an output contact point, the output contact point being connected to a gate of a first p-type transistor of an input-falling-transition circuit;
- and
- a second p-type transistor having a drain connected to the output contact point and a gate connected to a contact point of the input-falling-transition circuit;
- wherein the input-rising-transition circuit has a third p-type transistor connected in series with the second p-type transistor, the third p-type transistor having a drain connected to a source of the second p-type transistor and a gate connected to the single-rail input.
3 more elements
A method, comprising:
- receiving at a voltage transition circuit a power supply voltage from a low voltage domain;
- converting the power supply voltage from the low voltage domain to a high voltage domain;
- and
- preventing a current leakage or direct current when the low voltage domain is powered down;
- wherein the voltage transition circuit includes an input-falling-transition circuit, the input-falling-transition circuit comprising:
- a p-type transistor;
- and
- an n-type transistor having a drain connected to a drain of the p-type transistor at a contact point, a source connected to a single-rail input, the p-type transistor having a source connected to a VDDH voltage of the high voltage domains;
- wherein the n-type transistor has a gate connected to a power down input.
6 more elements
A system, comprising:
- means for receiving at a voltage transition circuit a power supply voltage from a low voltage domain;
- means for converting the power supply voltage from the low voltage domain to a high voltage domain;
- and
- means for preventing a current leakage or direct current when the low voltage domain is powered down;
- wherein the voltage transition circuit includes an input-falling-transition circuit, the input-falling-transition circuit comprising:
- a p-type transistor;
- and
- an n-type transistor having a drain connected to a drain of the p-type transistor at a contact point, a source connected to a single-rail input, the p-type transistor having a source connected to a VDDH voltage of the high voltage domain;
- wherein the n-type transistor has a gate connected to a power down input.
6 more elements
Dependencies are inferred from the claim text.