Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film forming chamber, minute amounts of gas (silane series gas) which comprises smaller particles than particles of the organic compound material, i.e., a material with a smaller atomic radius are flowed, and the material with a small atomic radius is made to be included in an organic compound film.
Claims30
A light emitting apparatus comprising a light emitting device comprising:
- an anode over a substrate having an insulation surface;
- an EL layer which is in contact with the anode;
- and
- a cathode which is in contact with the EL layer,
- wherein the EL layer includes an organic compound in which electro luminescence is obtained, and
- wherein the EL layer includes silicon, with 1×1018-5×1020 atoms/cm3 by SIMS measurement.
A light emitting apparatus comprising a light emitting device comprising:
- an anode over a substrate having an insulation surface,
- an EL layer which is in contact with the anode;
- and
- a cathode which is in contact with the EL layer,
- wherein the EL layer includes a host material and a dopant material,
- wherein the dopant material is an organic compound in which electro luminescence is obtained, and
- wherein the EL layer includes silicon, with 1×1018-5×1020 atoms/cm3 by SIMS measurement.
A light emitting apparatus comprising a light emitting device comprising:
- an anode over a substrate having an insulation surface,
- an EL layer which is in contact with the anode;
- and
- a cathode which is in contact with the EL layer,
- wherein the EL layer comprises:
- a hole injection layer in contact with the anode;
- a light emitting layer over the hole injection layer including an organic compound in which electro luminescence is obtained;
- and
- an electron injection layer over the light emitting layer, and
- wherein the light emitting layer includes silicon, with 1×1018-5×10 20 atoms/cm3 by SIMS measurement.
A light emitting apparatus comprising a light emitting device comprising:
- an anode over a substrate having an insulation surface,
- an EL layer which is in contact with the anode;
- and
- a cathode which is in contact with the EL layer,
- wherein the EL layer comprises:
- a hole injection layer in contact with the anode;
- a hole transport layer over the hole injection layer;
- a light emitting layer over the hole transport layer, including an organic compound in which electro luminescence is obtained;
- a electron transport layer over the light emitting layer;
- and
- an electron injection layer over the electron transport layer, and
- wherein the light emitting layer includes silicon, with 1×1018-5×1020 atoms/cm3 by SIMS measurement.
A light emitting apparatus comprising a light emitting device comprising:
- an anode over a substrate having an insulation surface,
- an EL layer which is in contact with the anode;
- and
- a cathode which is in contact with the EL layer,
- wherein the EL layer comprises:
- a first functional region over the anode, including a first compound;
- a second functional region in contact with the first functional region, including a second organic compound in which electro luminescence is obtained;
- and
- a mixed region between the first functional region and the second functional region, including the first compound and the second organic compound, and
- wherein the mixed region includes silicon, with 1×1018-5×1020 atoms/cm3 by SIMS measurement.
Dependencies are inferred from the claim text.