Semiconductor device and manufacturing method of the same

A semiconductor device comprising:

• a semiconductor die;
• a first insulation film disposed a front surface of the semiconductor die;
• a pad electrode disposed on part of the first insulation film;
• a second insulation film disposed on the front surface so as to be on the first insulation film so that an edge portion of the pad electrode is placed between the first and second insulation films;
• a first wiring layer in contact with the pad electrode through an opening formed in the second insulation film, the first wiring layer extending onto the second insulation film;
• and
• a penetrating electrode disposed in a via hole and electrically connected with the pad electrode, the via hole being formed from a back surface of the semiconductor die toward the pad electrode so that the pad electrode overlaps an end of the via hole at the front surface of the semiconductor die.

A semiconductor device comprising:

• a semiconductor die;
• a first insulation film disposed a front surface of the semiconductor die;
• a pad electrode disposed on part of the first insulation film;
• a second insulation film disposed on the front surface so as to be on the first insulation film so that an edge portion of the pad electrode is between the first and second insulation films;
• a first wiring layer in contact with the pad electrode through an opening formed in the second insulation film, the first wiring layer extending onto the second insulation film;
• a penetrating electrode disposed in a via hole and electrically connected with the pad electrode, the via hole being formed from a back surface of the semiconductor die toward the pad electrode;
• a second wiring layer electrically connected with the penetrating electrode and extending onto the back surface of the semiconductor die;
• and
• a protection layer formed on the back surface of the semiconductor die so as to cover at least part of the second wiring layer.