Semiconductor chip having gettering layer, and method for manufacturing the same
AssigneeRenesas Technology Corp.
InventorsKazuhito Matsukawa, Tsuyoshi Koga, Akio Nishida, Yoshiko Higashide, Jun Shibata, Hiroshi Tobimatsu
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Abstract
In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
Claims2
A semiconductor device comprising:
- a semiconductor chip which includes an element layer formed on a front face of the semiconductor chip and a gettering layer on a back face of the semiconductor chip;
- a package substrate which faces the back face;
- and
- a resin covering the semiconductor chip and the package substrate,
- wherein a thickness of said semiconductor chip is 100 μm or less,
- wherein said gettering layer is a damaged layer,
- wherein the damaged layer includes a plurality of grooves,
- wherein a depth of each of said grooves is 2 to 3 μm, and
- wherein in plan view to said semiconductor chip, each of said grooves is a linear groove.
A semiconductor device comprising:
- a semiconductor chip which includes an element layer formed on a front face of the semiconductor chip and a gettering layer on a back face of the semiconductor chip;
- a substrate which faces the back face;
- a wire;
- and
- a resin covering the semiconductor chip, the wire and the package substrate,
- wherein a thickness of said semiconductor chip is 100 μm or less,
- wherein said gettering layer is a damaged layer,
- wherein the damaged layer includes a plurality of grooves,
- wherein a depth of each of said grooves is 2 to 3 μm, and
- wherein in plan view to said semiconductor chip, each of said grooves is a linear groove, and
- wherein the wire electrically connects between the substrate and the semiconductor chip.
Dependencies are inferred from the claim text.