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US 7,582,948 B2Granted
Integrated transistor, particularly for voltages and method for the production thereof
AssigneeInfineon Technologies AG
InventorsKarlheinz Müller, Klaus Röschlau
Life of this patent
Estimating the term…
Abstract
Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.
Claims23
An integrated transistor comprising:
- a semiconductor substrate;
- a first connection region remote from a main area of the semiconductor substrate and contained in the semiconductor substrate, the first connection region being doped in accordance with a basic doping type and being arranged at a distance from the main area of the semiconductor substrate;
- a drift region contained in the semiconductor substrate, the drift region being doped in accordance with the basic doping type with a lower dopant concentration than the first connection region, and the drift region being arranged between the first connection region and the main area;
- a second connection region near the main area, the second connection region being doped in accordance with the basic doping type and being arranged nearer to the main area of the substrate than the first connection region;
- a reverse doping region, which is doped in accordance with a different doping type than the basic doping type and separates the drift region from the second connection region;
- an electrically insulating isolating trench extending from the main area in the direction of the first connection region, the drift region extending from the first connection region to the reverse doping region;
- and an auxiliary trench extending from the main area at least as far as the first connection region.
4 more elements
An integrated transistor comprising:
- a semiconductor substrate;
- a first connection region remote from a main area of the semiconductor substrate and contained in the semiconductor substrate, the connection region being doped in accordance with a basic doping type and being arranged at a distance from the main area of the semiconductor substrate;
- a drift region contained in the semiconductor substrate, the drift region being doped in accordance with the basic doping type with a lower dopant concentration than the first connection region, and the drift region being arranged between the first connection region and the main area;
- a second connection region near the main area, the second connection region being doped in accordance with the basic doping type and being arranged nearer to the main area of the substrate than the first connection region;
- a reverse doping region, which is doped in accordance with a different doping type than the basic doping type and separates the drift region from the second connection region;
- an electrically insulating isolating trench extending from the main area in the direction of the first connection region;
- and an auxiliary trench extending from the main area at least as far as the first connection region;
- wherein a doping of the basic doping type with a higher dopant concentration than in the drift region is arranged between the isolating trench and the auxiliary trench, the doping filling only a region in a vicinity of the auxiliary trench and not in a vicinity of the isolating trench.
5 more elements
Dependencies are inferred from the claim text.