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US 7,582,942 B2Granted
Planar flux concentrator for MRAM devices
AssigneeMagIC Technologies, Inc.
InventorsYimin Guo, Po-Kang Wang
Life of this patent
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Abstract
The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.
Claims9
A low cost flux concentrator, comprising:
- an MTJ stack, including a capping layer having a top surface, a bottom electrode, and a dielectric layer, having a top surface, that encapsulates said MTJ stack and extends above said capping layer;
- in said dielectric layer, a trench, having vertical sidewalls, that is longer and wider than said capping layer and that extends downwards as far as said capping layer top surface;
- said trench being filled with a conductive material that serves as a bit line that passes over said MTJ stack and that has a top surface coplanar with said dielectric top surface;
- an insulating layer on said coplanar surfaces;
- a ferromagnetic layer on said insulating layer;
- and
- on said ferromagnetic layer, an antiferromagnetic layer that serves to keep said ferromagnetic layer magnetized in a direction parallel to said bit line, thereby providing a domain stabilizing field.
4 more elements
Dependencies are inferred from the claim text.