Magnetic memory device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWoo-Yeong Cho, Yun-Seung Shin, Hyun-Geun Byun, Choong-Keun Kwak
Life of this patent
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Abstract
A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device further includes a magnetic tunnel junction structure connected to the readout diode, first and second write-in conductors disposed at both sides of the magnetic tunnel junction structure and connected to the first and second write-in diodes, respectively and a first write-in line, a readout line and a second write-in line, which are connected to the first write-in conductor, the magnetic tunnel injection structure, and the second write-in conductor, respectively.
Claims6
A magnetic memory device comprising:
- a common line;
- a first write-in diode, a readout diode and second write-in diode being connected to the common line in parallel;
- a magnetic tunnel junction structure connected to the readout diode;
- first and second write-in conductors disposed at both sides of the magnetic tunnel junction structure and connected to the first and second write-in diodes, respectively;
- and
- a first write-in line, a readout line and a second write-in line, which are connected to the first write-in conductor, the magnetic tunnel injection structure, and the second write-in conductor, respectively, wherein the first write-in diode, the readout diode, the second write-in diode, the magnetic tunnel junction structure, the first and second write-in conductors, the first write-in line, the readout line, and the second write-in line constitute a unit memory cell.
Dependencies are inferred from the claim text.