Semiconductor devices having polymetal gate electrodes
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-Hak Lee, Dong-Chan Lim, Gil-Heyun Choi, Hee-Sook Park
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate insulating film. The polymetal gate electrode includes a conductive polysilicon film on the gate insulating film, a first metal silicide film on the conductive polysilicon film, a barrier film on the first metal silicide film, and a metal film on the barrier film. The barrier film includes a titanium nitride (TiN) film on the first metal silicide film and a buffer layer between the TiN film and the metal film.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film on the semiconductor substrate;
- and
- a polymetal gate electrode on the gate insulating film, the polymetal gate electrode including a conductive polysilicon film on the gate insulating film, a first metal silicide film on the conductive polysilicon film, a barrier film on the first metal silicide film, and a metal film on the barrier film and the barrier film including a titanium nitride (TiN) film on the first metal silicide film and a buffer layer between the TiN film and the metal film, wherein the barrier film comprises the TiN film and a Ti film.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film on the semiconductor substrate;
- and
- a polymetal gate electrode on the gate insulating film, the polymetal gate electrode including a conductive polysilicon film on the gate insulating film, a first metal silicide film on the conductive polysilicon film, a barrier film on the first metal silicide film, and a metal film on the barrier film and the barrier film including a titanium nitride (TiN) film on the first metal silicide film and a buffer layer between the TiN film and the metal film, wherein the barrier film comprises the TiN film and an amorphous tungsten (W) silicide film.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film on the semiconductor substrate;
- and
- a polymetal gate electrode on the gate insulating film, the polymetal gate electrode including a conductive polysilicon film on the gate insulating film, a first metal silicide film on the conductive polysilicon film, a barrier film on the first metal suicide film, and a metal film on the barrier film and the barrier film including a titanium nitride (TiN) film on the first metal silicide film and a buffer layer between the TiN film and the metal film, wherein the metal film includes tungsten (W) or molybdenum (Mo).
Dependencies are inferred from the claim text.