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US 7,582,923 B2Granted
Magnetic memory and manufacturing method for the same
AssigneeNEC Corporation
InventorsYoshiyuki Fukumoto, Tetsuhiro Suzuki, Katsumi Suemitsu
Life of this patent
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Abstract
The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.
Claims10
A magnetic memory comprising:
- a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive;
- and
- a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction;
- a space layer;
- and
- a base layer having a magnetization pinned layer that is provided to be opposite to said magnetization free layer with respect to said spacer layer,
- wherein said stress inducing structure comprises a stress inducing layer that is provided separately from said base layer, said base layer being separated from said stress inducing layer by an interlayer insulating film directly therebetween.
4 more elements
A magnetic memory comprising;
- a magnetization free layer including a ferromagnetic layer having a shape dependent magnetic anisotropy in a first direction and a magnetic strain constant is positive;
- a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction;
- a spacer layer connected with said magnetization free layer,
- wherein said stress inducing structure comprises a base layer having a magnetization pinned layer that is provided to be opposite to said magnetization free layer with respect to said spacer layer;
- and
- an interlayer insulating layer directly between said base layer and a bottommost layer of said stress inducing structure.
3 more elements
A magnetic memory comprising:
- a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive;
- a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction;
- a spacer layer;
- and
- a base layer having a magnetization pinned layer that is provided to be opposite to said magnetization free layer with respect to said spacer layer,
- wherein said base layer comprises a protrusion formed to extend in a third direction oblique to the first direction and to protrude in the third direction, and
- said protrusion functions as said stress inducing structure.
4 more elements
A magnetic memory comprising;
- a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is negative;
- a stress inducing structure configured to apply a compression stress to said magnetization free layer in a same direction as the first direction;
- a spacer layer;
- and
- a base layer having a magnetization pinned layer that is provided to be opposite to said magnetization free layer with respect to said spacer layer,
- wherein said stress inducing structure comprises a stress inducing layer that is provided separately from said base layer, said base layer being separated from said stress inducing layer by an interlayer insulating film directly therebetween.
3 more elements
A magnetic memory comprising:
- a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is negative;
- a stress inducing structure configured to apply a compression stress to said magnetization free layer in a same direction as the first direction;
- a spacer layer connected with said magnetization free layer,
- wherein said stress inducing structure comprises a base layer having a magnetization pinned layer that is provided to be opposite to said magnetization free layer with respect to said spacer layer;
- and
- an interlayer insulating layer directly between said base layer and a bottommost layer of said stress inducing structure.
3 more elements
A magnetic memory comprising:
- a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is negative;
- a stress inducing structure configured to apply a compression stress to said magnetization free layer in a same direction as the first direction;
- a spacer layer;
- and
- a base layer having a magnetization pinned layer that is provided to be opposite to said magnetization free layer with respect to said spacer layer,
- wherein said base layer comprises a protrusion formed to extend in a third direction oblique to the first direction and to protrude in the third direction, and
- said protrusion functions as said stress inducing structure.
4 more elements
Dependencies are inferred from the claim text.