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US 7,582,922 B2Granted
Semiconductor device
AssigneeInfineon Technologies Austria AG
InventorWolfgang Werner
Life of this patent
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Abstract
A semiconductor device is disclosed. One embodiment provides a top surface. A first lateral semiconductor region is arranged adjacent to the top surface and includes a transistor structure. The transistor structure includes a drain zone of a first conductivity type. A second lateral semiconductor region is arranged below the first semiconductor region and includes a junction field-effect transistor structure. The junction field-effect transistor structure includes a source zone of the first conductivity type which is electrically connected to the drain zone of the transistor structure.
Claims18
A semiconductor device comprising:
- a top surface;
- a first lateral semiconductor region arranged adjacent to the top surface and comprising a transistor structure, including a drain zone of a first conductivity type;
- and
- a second lateral semiconductor region arranged below the first semiconductor region and comprising a junction field-effect transistor structure, the junction field-effect transistor structure comprising a source zone of the first conductivity type which is electrically coupled to the drain zone transistor structure, wherein the transistor structure comprises a source zone of a first conductivity type and a channel zone, the source zone and the drain zone of the transistor structure being arranged in the first semiconductor region and spaced apart from each other, and the channel zone being arranged between the source zone and the drain zone of the transistor structure.
1 more element
A semiconductor device comprising:
- a top surface;
- a first lateral semiconductor region arranged adjacent to the top surface and comprising a MOS field-effect transistor structure, including a drain zone of a first conductivity type;
- and
- a second lateral semiconductor region arranged below the first semiconductor region and comprising a junction field-effect transistor structure, the junction field-effect transistor structure comprising a source zone of the first conductivity type which is electrically coupled to the drain zone of the MOS field-effect transistor structure, wherein the MOS field-effect transistor structure comprises a source zone of a first conductivity type and a channel zone, the source zone and the drain zone of the MOS field-effect transistor structure being arranged in the first semiconductor region and spaced apart from each other, and the channel zone being arranged between the source zone and the drain zone of the MOS field-effect transistor structure.
1 more element
A semiconductor device comprising:
- a top surface;
- a first lateral semiconductor region arranged adjacent to the top surface and comprising a MOS field-effect transistor structure, including a drain zone of a first conductivity type;
- and
- a second lateral semiconductor region arranged below the first semiconductor region and comprising a junction field-effect transistor structure, the junction field-effect transistor structure comprising a source zone of the first conductivity type which is electrically coupled to the drain zone of the MOS field-effect transistor structure, wherein the junction field-effect transistor structure and the MOS field-effect transistor structure are implemented such that a pinch-off voltage of the junction field-effect transistor structure is smaller than a breakdown voltage of the MOS field-effect transistor structure.
1 more element
A semiconductor device comprising:
- a top surface;
- a first lateral semiconductor region arranged adjacent to the top surface and comprising a MOS field-effect transistor structure, the MOS field-effect transistor structure comprising a drain zone of a first conductivity type, a source zone of the first conductivity type, a channel zone of a second conductivity type which is inverse to the first conductivity type, the channel zone being arranged between the source zone and the drain zone of the MOS field-effect transistor;
- and
- a second lateral semiconductor region arranged below the first semiconductor region and comprising a junction field-effect transistor structure, the junction field-effect transistor structure comprising a source zone of the first conductivity type, a drain zone of the first conductivity type and a channel zone of the first conductivity type, and a gate zone of the second conductivity type, the channel zone being arranged at least partly below the source zone;
- wherein the source zone of the junction field-effect transistor structure is electrically connected to the drain zone of the MOS field-effect transistor structure;
- and
- wherein the source zone, the channel zone and the drain zone of the MOS field-effect transistor structure are arranged next to one another in stripes in a first direction, and wherein the channel zone and the gate zone of the junction field-effect transistor structure are arranged next to one another in stripes in a second direction, the first direction being orthogonal to the second direction.
4 more elements
Dependencies are inferred from the claim text.