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US 7,582,921 B2Granted
Semiconductor device and method for patterning
AssigneeHitachi, Ltd.
InventorsTomonori Sekiguchi, Toshihiko Tanaka, Toshiaki Yamanaka, Takeshi Sakata, Katsutaka Kimura
Life of this patent
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Abstract
In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely. It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
Claims8
A semiconductor device comprising:
- a first wiring extending in a first direction and coupled to a plurality of first memory cells;
- a second wiring extending in the first direction and coupled to a plurality of second memory cells;
- a third wiring extending in the first direction and coupled to a plurality of third memory cells;
- a fourth wiring extending in the first direction and coupled to a plurality of fourth memory cells;
- a first contact provided at one end of the first wiring;
- a second contact provided at one end of the second wiring;
- a third contact provided at one end of the third wiring;
- and
- a fourth contact provided at one end of the fourth wiring,
- wherein the plurality of first to fourth memory cells are formed in a first rectangular region,
- wherein the first and fourth contacts are formed in a second region, wherein the second and third contacts are formed in a third region,
- wherein the first rectangular region is provided between the second region and the third region,
- wherein a first side of the first rectangular region extends in a second direction perpendicular to the first direction, and
- wherein a distance between the other end of the second wiring and the first side of the first rectangular region is shorter than a distance between the other end of the third wiring and the first side of the first rectangular region.
11 more elements
Dependencies are inferred from the claim text.