Apparatus comprising an avalanche photodiode
AssigneePrinceton Lightwave, Inc.
InventorsMark Allen Itzler, Rafael Ben-Michael
Life of this patent
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Abstract
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
Claims20
A photodiode comprising a semiconductor layer for providing avalanche multiplication of electrical carriers wherein the semiconductor layer comprises:
- (1) an active region having a substantially uniform breakdown voltage, Vba, and wherein the active region is doped with a first dopant to a first diffusion radius, Rda, and wherein the active region is doped to a first junction depth that is substantially uniform;
- and
- (2) an edge region having an edge-region width, wherein the edge region is doped with a second dopant to a second diffusion radius, Rde, and wherein the edge region is doped to a second junction depth that has a second average junction depth, and wherein the edge-region width is within the range of approximately Rde to approximately Rde+2Rda, and further wherein the edge region has a breakdown voltage, Vbe, that is greater than or equal to 0.9Vba;
- wherein the active region and the edge region are contiguous, and wherein the first junction depth is greater than the second average junction depth.
A single-photon avalanche photodiode comprising a semiconductor layer for providing avalanche multiplication of electrical carriers wherein the semiconductor layer comprises:
- (1) an active region having a substantially uniform breakdown voltage, Vba, wherein the active region is doped with a first dopant to a first diffusion radius, Rda, and a second dopant to a second diffusion radius, Rde;
- and
- (2) an edge region having a breakdown voltage, Vbe, that is greater than or equal to 0.9Vba, wherein a portion of the edge region is doped with the second dopant to a second diffusion radius, Rde, and wherein the edge region has an edge-region width that is within the range of approximately Rde to approximately Rde+2Rda;
- wherein the active region and the edge region are contiguous, and wherein the active region and the edge region have substantially the same doping level.
A single-photon avalanche photodiode comprising a semiconductor layer for providing avalanche multiplication of electrical carriers wherein the semiconductor layer comprises a device region that is formed by operations comprising:
- doping the device region with a first dopant to a first diffusion radius, Rde, wherein the device region comprises an active region that is surrounded by an edge region;
- and
- doping the active region with a second dopant to a second diffusion radius, Rda;
- wherein the active region has a substantially uniform breakdown voltage, Vba;
- wherein the edge region has a breakdown voltage, Vbe, that is greater than or equal to 0.99Vba;
- wherein the edge region has an edge-region width that is within the range of approximately Rde to approximately Rde+2Rda;
- and
- wherein the active region and the edge region are contiguous.
Dependencies are inferred from the claim text.