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US 7,582,916 B2Granted
Silicon controlled rectifier
AssigneeUnited Microelectronics Corp.
InventorsMIng-Dou Ker, Chun-Yu Lin, Chang-Tzu Wang
Life of this patent
Estimating the term…
Abstract
A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the second conductive type well and the second conductive type doped region is located within the first conductive type well and shaped as a polygonal ring concentric to the first conductive type well.
Claims16
A silicon controlled rectifier structure, comprising:
- a p-type substrate having at least an N-well and a P-well therein, wherein a doping concentration of the P-well is higher than a doping concentration of the p-type substrate, and the P-well surrounds and adjoins with the N-well;
- a P-type doped region located within the N-well and in the middle of the N-well;
- and
- an N-type doped region located within the P-well, wherein the N-type doped region is located along an outward edge of the P-well and separated from the N-well.
1 more element
A silicon controlled rectifier structure, comprising:
- a first conductive type substrate having at least a first conductive type well and a second conductive type well therein, wherein a doping concentration of the first conductive type well is higher than a doping concentration of the first conductive type substrate, and the first conductive type well surrounds and adjoins with the second conductive type well;
- a first conductive type doped region located within the second conductive type well and in the middle of the second conductive type well;
- and
- a second conductive type doped region located within the first conductive type well, wherein the second conductive type doped region is located along an outward edge of the first conductive type well and separated from the second conductive type well.
1 more element
Dependencies are inferred from the claim text.