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US 7,582,912 B2Granted
Diode having high brightness and method thereof
AssigneeLG Electronics Inc.
InventorMyung Cheol Yoo
Life of this patent
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Abstract
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
Claims21
A light emitting diode comprising:
- a substrate;
- an n-type layer on a first surface of the substrate;
- an active layer on the n-type layer;
- a p-type layer on the active layer;
- a first electrode contacting the p-type layer;
- a second electrode contacting the n-type layer;
- and
- a reflective layer on a second surface of the substrate
- wherein a surface roughness of at least one portion of an interface between the reflective layer and the second surface of the substrate is less than 15 nm.
6 more elements
Dependencies are inferred from the claim text.