Nitride semiconductor device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorsKyozo Kanamoto, Katsuomi Shiozawa, Kazushige Kawasaki, Hitoshi Sakuma, Yoshiyuki Suehiro
Life of this patent
Estimating the term…
Abstract
A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.
Claims17
A nitride semiconductor device comprising:
- a nitride semiconductor substrate;
- a layered-structure of a nitride semiconductor element that is provided on a first main surface side of said nitride semiconductor substrate;
- a metal electrode provided on a second main surface side of said nitride semiconductor substrate;
- and
- a surface denatured layer that contains Si and is provided between said nitride semiconductor substrate and said metal electrode, said surface denatured layer being formed by denaturing the second main surface of said nitride semiconductor substrate by causing the second main surface to react with a first material that contains Si.
Dependencies are inferred from the claim text.