Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit

A method of producing a dielectric layer for an organic field effect transistor (OFET), the method comprising:

• providing a substrate having a prestructured gate electrode;
• applying a polymer formulation on the subsrate, wherein the polymer formulation comprises:
• a. about 100 parts of at least one crosslinkable base polymer,
• b. from about 10 to about 20 parts of at least one compound as an electrophile crosslinking component,
• c. from about 0.2 to about 10 parts of at least one photo acid generator, wherein the at least one photo acid generator is triphenylsulfonium hexaflate, and
• d. at least one solvent;
• effecting a photoinduced crossliniking reaction after applying the polymer formulation;
• performing a post exposure bake after effecting the photoinduced crossliniking reaction;
• and
• applying a source-drain layer to the dielectric layer after performing the post exposure bake,
• wherein the compound comprises one of the following structures:
• wherein R1 comprises:
• —S—, —SO2—, —Sx—, —(CH2)x—, x=1-10, or one or more of the following structures:
• wherein each occurrence of R2 independently comprises an alkyl having 1 to 10 carbon atoms or an aryl.

A method of producing a dielectric layer for an organic field effect transistor (OFET), the method comprising:

• providing a substrate having a prestructured gate electrode;
• applying a polymer formulation on the substrate, wherein the polymer formulation comprises
• a. about 100 parts by mass of at least one crosslinikable base polymer,
• b. from about 10 to about 20 parts by mass of at least one compound as an electrophilic crossliniking component,
• c. from about 0.2 to about 10 parts by mass of at least one photo acid generator, wherein the at least one photo acid generator is a sulfonium or an iodonium salt, and
• d. at least one solvent;
• effecting a photoinduced crossliniking reaction after applying the polymer formulation;
• performing a post exposure bake after effecting the photoinduced crossliniking reaction;
• and
• applying a source-drain layer to the dielectric layer after performing the post exposure bake
• wherein the compound comprises
• (1,4)di-hydroxymethyl benzene, (1,4)di-hydroxymethylnaphthalene,
• 4-hydroxymethylphenyl-4-hydroxymethylbenzene, (1,8)dihydroxymethylanthracene,
• (1,3,4,6)-tetraflouro(2,5)dihydroxymethylbenzene, or the following structure:
• wherein R1 comprises:
• —S—, —SO2—, —Sx—, —(CH2)x—, x=1-10, or one or more of the following structures:
• wherein each occurrence of R2 independently comprises an alkyl having 1 to 10 carbon atoms or an aryl.