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US 7,582,891 B2Granted
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
AssigneeArizona Board of Regents, A Corporate Body Organized Under Arizona Law, Acting on Behalf of Arizona State University
InventorsJohn Kouvetakis, Jose Menendez, John Tolle, Ling Liao, Dean Samara-Rubio
Life of this patent
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Abstract
Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
Claims5
A semiconductor structure comprising:
- a single quantum well Ge1-x1-ySix1Sny/Ge1-x2Six2 heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer.
Dependencies are inferred from the claim text.