Method of scanning a substrate in an ion implanter
AssigneeApplied Materials, Inc.
InventorsGeoffrey Ryding, Takao Sakase, Marvin Farley, Theodore H. Smick
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Abstract
This invention relates to a method of scanning a substrate through an ion beam in an ion implanter to provide uniform dosing of the substrate. The method comprises causing relative motion between the substrate and the ion beam such that the ion beam passes over all of the substrate and rotating the substrate substantially about its centre while causing the relative motion. Rotating the substrate while causing the relative motion between the substrate and the ion beam has several advantages including avoiding problematic angular effects, increasing uniformity, increasing throughput and allowing a greater range of ion beam profiles to be tolerated.
Claims19
A method of scanning a substrate through an ion beam in an ion implanter, comprising:
- causing relative motion between the substrate and the ion beam;
- and
- rotating the substrate substantially about its centre while causing the relative motion, such that the ion beam would pass over all of the substrate even if the substrate were not rotating, the relative motion between the substrate and the ion beam being at a constant speed.
Dependencies are inferred from the claim text.