Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Ho Lee, Jun-Hyun Cho, Jung-Sik Choi, Dong-Jun Lee
Life of this patent
Estimating the term…
Abstract
A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 3,300 to 3,700 to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
Claims17
A method of forming a silicon oxide layer comprising:
- coating a semiconductor substrate having a stepped portion with a spin-on glass (SOG) composition including polysilazane having the compound formula —(SiH2NH)n— wherein n represents a positive integer, in an amount of about 10 to about 30% by weight, based on the total weight of the composition, whereby the polysilazane has a weight average molecular weight within the range of about 3,300 to about 3,700, and a solvent in an amount of about 70 to about 90% by weight, based on the total weight of the composition to form a SOG layer on the semiconductor substrate;
- and
- curing the SOG layer to form the silicon oxide layer,
- wherein the silicon oxide layer formed using the composition has a reduced number of scratches.
Dependencies are inferred from the claim text.