Method of manufacturing insulating film, method of manufacturing transistor, and method of manufacturing electronic device
AssigneeKabushiki Kaisha Toshiba
InventorKazuaki Iwasawa
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Abstract
A method of manufacturing an insulating film includes coating a first liquid material in which polysilazane is dissolved on a substrate; decreasing dangling bonds of silicon (Si) in the first liquid material; after decreasing the dangling bonds, coating a second liquid material which is similar to the first liquid material on the first liquid material; and converting the first liquid material and the second liquid material into a silicon (Si) insulating film.
Claims12
A method of manufacturing an insulating film, comprising:
- coating a first liquid material, in which polysilazane is dissolved, on a substrate;
- plasma treating the first liquid material to decrease dangling bonds of silicon (Si) in the first liquid material;
- coating a second liquid material, which is similar to the first liquid material, on the first liquid material after said plasma treating;
- and
- converting a combination of the first liquid material after said plasma treating and the second liquid material into a silicon (Si) insulating film.
A method of manufacturing a transistor, comprising:
- coating a first liquid material, in which polysilazane is dissolved, over a surface of a first semiconductor thin film on a substrate;
- plasma treating the first liquid material to decrease dangling bonds of silicon (Si) in the first liquid material;
- coating a second liquid material, which is similar to the first liquid material, on the first liquid material after said plasma treating;
- converting a combination of the first liquid material after said plasma treating and the second liquid material into a silicon insulating film to form a gate insulating film;
- and
- forming a second semiconductor thin film or a metal film on the gate insulating film.
A method of manufacturing an electronic device, comprising:
- forming a trench in a substrate in a depth direction from a surface of the substrate;
- plasma treating the first liquid material to decrease dangling bonds of silicon (Si) in the first liquid material;
- coating a second liquid material, which is similar to the first liquid material, on the first liquid material after said plasma treating;
- converting a combination of the first liquid material after said plasma treating and the second liquid material into a silicon (Si) insulating film.
Dependencies are inferred from the claim text.