Compositions for removal of processing byproducts and method for using same

A method for use in removing processing byproducts, comprising:

• providing a substrate assembly comprising at least one metal containing material;
• patterning the at least one metal containing material resulting in processing byproducts and a patterned metal containing structure;
• and
• exposing the processing byproducts to a non-aqueous composition for a time effective to remove at least a portion of the processing byproducts from the substrate assembly, wherein the non-aqueous composition consists of one or more non-aqueous solvents, one or more fluoride compounds, and one or more pyridine compounds, and wherein the one or more non-aqueous solvents are selected from the group consisting of ketones, alcohols, and aldehydes.

A method for use in removing processing byproducts, comprising:

• providing a substrate assembly comprising at least one metal containing material;
• patterning the at least one metal containing material resulting in processing byproducts and a patterned metal containing structure;
• and
• exposing the processing byproducts to a composition for a time effective to remove at least a portion of the processing byproducts from the substrate assembly, wherein the composition consists of glacial acetic acid, one or more fluoride compounds, one or more pyridine compounds, and five to ten percent water by volume of the composition, and wherein the processing byproducts comprise at least one of silicon and metal halides.

A method for use in removing processing byproducts in fabrication of a magnetoresistive random access memory (MRAM) device, comprising:

• providing a substrate assembly comprising at least an MRAM metal stack, wherein the metal stack comprises at least one or more magnetic layers;
• patterning the MRAM metal stack using a hard mask, wherein the patterning of the MRAM metal stack results in processing byproducts;
• and
• exposing the processing byproducts to a non-aqueous composition for a time effective to remove at least a portion of the processing byproducts from the MRAM metal stack of the substrate assembly, wherein the composition consists of one or more non-aqueous solvents, one or more fluoride compounds, and one or more pyridine compounds, and wherein the one or more non-aqueous solvents are selected from the group consisting of ketones, alcohols, and aldehydes.

A method for use in removing processing byproducts in fabrication of a magnetoresistive random access memory (MRAM) device, comprising:

• providing a substrate assembly comprising at least an MRAM metal stack, wherein the metal stack comprises at least one or more magnetic layers;
• patterning the MRAM metal stack using a hard mask, wherein the patterning of the MRAM metal stack results in processing byproducts;
• and
• exposing the processing byproducts to a composition for a time effective to remove at least a portion of the processing byproducts from the MRAM metal stack of the substrate assembly, wherein the composition consists of glacial acetic acid, one or more fluoride compounds, one or more pyridine compounds, and five to ten percent water by volume of the composition, and wherein the processing byproducts comprise at least one of silicon and metal halides.