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US 7,582,568 B2Granted
Method of forming a phase changeable structure
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Soo Lim, Jun-Soo Bae
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Abstract
The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.
Claims12
A method of forming a phase changeable structure, the method comprising:
- forming a phase changeable layer on a lower electrode;
- forming a conductive layer on the phase changeable layer;
- etching at least a portion of the conductive layer with a first material having a chlorine-containing compound to form an upper electrode;
- exposing the upper electrode and the phase changeable layer to a second material having a fluorine-containing compound;
- and
- etching the phase changeable layer with a third material that is substantially free of chlorine to form a phase changeable pattern, in which the third material is different from the second material.
3 more elements
Dependencies are inferred from the claim text.