Atomic layer deposition methods

An atomic layer deposition method, comprising:

• providing a semiconductor substrate within a deposition chamber;
• flowing a first metal halide-comprising precursor gas to the substrate within the chamber under conditions which form a first monolayer on the substrate, the metal halide comprises MQ4, where M is the metal and Q is a combination of different halogens, and the first monolayer comprises MQx, where x is less than 4, plasma conditions being in the chamber during the flowing of the first metal halide-comprising precursor gas, the plasma conditions being at a power below which the first monolayer is charge neutral;
• while flowing the first metal halide-comprising precursor gas to the substrate within the chamber, flowing H2 to the substrate within the chamber;
• flowing a second precursor gas to the first monolayer under conditions which react with the first monolayer and form a second monolayer on the substrate, the second monolayer comprising the metal M and being void of the halogen;
• and
• repeating at least some of the flowing of the first metal halide-comprising precursor gas, at least some of the flowing of the H2, and at least some of the flowing of the second precursor gas under conditions which form a layer of material comprising the metal M on the substrate.

An atomic layer deposition method, comprising:

• providing a semiconductor substrate within a deposition chamber;
• flowing a first metal halide-comprising precursor gas to the substrate within the chamber from a first showerhead within the chamber under conditions which form a first monolayer on the substrate, the first monolayer comprising metal and halogen of the metal halide of the first metal halide-comprising precursor gas;
• while flowing the first metal halide-comprising precursor gas to the substrate within the chamber, flowing H2 to the substrate within the chamber from a second showerhead within the chamber that is different from the first showerhead;
• and
• flowing a second precursor gas to the first monolayer under conditions which react with the first monolayer and form a second monolayer on the substrate, the second monolayer comprising the metal.

An atomic layer deposition method, comprising:

• providing a semiconductor substrate within a deposition chamber;
• flowing a first metal halide-comprising precursor gas to the substrate within the chamber under conditions which form a first monolayer on the substrate, the first monolayer comprising metal and halogen of the metal halide of the first metal halide-comprising precursor gas;
• while flowing the first metal halide-comprising precursor gas to the substrate within the chamber, flowing H2 to the substrate within the chamber;
• flowing a second precursor gas to the first monolayer under conditions which react with the first monolayer and form a second monolayer on the substrate, the second precursor gas comprising a combination of N2 and NH3, and the second monolayer comprising a metal nitride comprising the metal;
• and
• while flowing the second precursor gas to the first monolayer, flowing H2 within the chamber.