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US 7,582,558 B2Granted
Reducing corrosion in copper damascene processes
AssigneeIntel Corporation
InventorsVinay B. Chikarmane, Kevin J. Fischer, Brennan L. Peterson
Life of this patent
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Abstract
Copper interconnects may be made using the damascene process with reduced copper corrosion. Copper corrosion may be reduced by planarizing through excess copper down to, but not completely through, a copper diffusion barrier layer. The copper diffusion barrier layer may be removed using a different technique. Thereafter, suitable chemicals may be utilized to clean the structure.
Claims7
A method comprising:
- forming a copper material in a trench in an interlayer dielectric;
- forming a copper diffusion barrier layer between said trench and said copper material and over the interlayer dielectric, said copper diffusion barrier including an excess extending over said dielectric outside said trench;
- planarizing said excess, but not planarizing through said excess, to form a remainder of said barrier;
- and
- removing said remainder using a technique other than planarization.
2 more elements
Dependencies are inferred from the claim text.