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US 7,582,549 B2Granted
Atomic layer deposited barium strontium titanium oxide films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Apparatus and methods of forming the apparatus include a dielectric layer containing barium strontium titanium oxide layer, an erbium-doped barium strontium titanium oxide layer, or a combination thereof. Embodiments of methods of fabricating such dielectric layers provide dielectric layers for use in a variety of devices. Embodiments include forming barium strontium titanium oxide film using atomic layer deposition. Embodiments include forming erbium-doped barium strontium titanium oxide film using atomic layer deposition.
Claims45
A method comprising:
- forming a layer of strontium titanium oxide by atomic layer deposition;
- forming a layer of barium titanium oxide by atomic layer deposition;
- and
- annealing in a selected gas ambient at a selected annealing temperature and time period such that the layers of strontium titanium oxide and barium titanium oxide form a layer of barium strontium titanium oxide.
1 more element
A method comprising:
- forming a layer of strontium titanium oxide by atomic layer deposition;
- forming a layer of barium titanium oxide by atomic layer deposition;
- forming a layer of erbium oxide by atomic layer deposition, the layer of erbium oxide between the layers of strontium titanium oxide and barium titanium oxide;
- and
- annealing the layers of strontium titanium oxide, barium titanium oxide, and erbium oxide to form a layer of erbium-doped barium strontium titanium oxide.
2 more elements
A method comprising:
- forming a array of memory cells;
- and
- forming a dielectric layer in a memory cell of the array, wherein forming the dielectric layer includes forming a barium strontium titanium oxide film by:
- forming a layer of strontium titanium oxide by atomic layer deposition;
- forming a layer of barium titanium oxide by atomic layer deposition;
- and
- annealing in a selected gas ambient at a selected annealing temperature and time period such that the layers of strontium titanium oxide and barium titanium oxide form barium strontium titanium oxide.
4 more elements
A method comprising:
- forming an array of cells;
- forming a dielectric layer in a cell of the array, wherein forming the dielectric layer includes forming an erbium-doped barium strontium titanium oxide film by:
- forming a layer of strontium titanium oxide by atomic layer deposition;
- forming a layer of barium titanium oxide by atomic layer deposition;
- forming a layer of erbium oxide by atomic layer deposition, the layer of erbium oxide between the layers of strontium titanium oxide and barium titanium oxide;
- and
- annealing the layers of strontium titanium oxide, barium titanium oxide, and erbium oxide to form erbium-doped barium strontium titanium oxide.
4 more elements
A method comprising:
- providing a controller;
- coupling an integrated circuit to the controller, the integrated circuit having a dielectric layer containing a barium strontium titanium oxide film, the barium strontium titanium oxide film formed by:
- forming a layer of strontium titanium oxide by atomic layer deposition;
- forming a layer of barium titanium oxide by atomic layer deposition;
- and
- annealing in a selected gas ambient at a selected annealing temperature and time period such that the layers of strontium titanium oxide and barium titanium oxide form barium strontium titanium oxide.
3 more elements
A method comprising:
- providing a controller;
- coupling a device to the controller, the device having a dielectric layer containing an erbium-doped barium strontium titanium oxide film, the erbium-doped barium strontium titanium oxide film formed by:
- forming a layer of barium oxide by atomic layer deposition;
- forming a layer of strontium oxide by atomic layer deposition;
- forming a layer of titanium oxide by atomic layer deposition;
- and
- annealing the layers of barium oxide, strontium oxide, and titanium oxide to form the erbium-doped barium strontium titanium oxide film.
4 more elements
Dependencies are inferred from the claim text.