Method for junction formation in a semiconductor device and the semiconductor device made thereof
AssigneesInteruniversitair Microelektronica Centrum vzw (IMEC), Koninklijke Philips Electronics N.V.
InventorBartlomiej Jan Pawlak
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Abstract
Devices and methods for junction formation in manufacturing a semiconductor device are disclosed. The devices have shallow junction depths far removed from end-of range defects. The method comprises forming an amorphous region in a crystalline semiconductor such as silicon down to a first depth, followed by implantation of a substitutional element such as carbon to a smaller depth than the first depth. The region is then doped with suitable dopants, e.g. phosphorus or boron, and the amorphous layer recrystallized by a thermal process.
Claims25
A method of preparing a semiconductor substrate for forming a semiconductor device therein, comprising:
- providing a crystalline substrate with its top surface amorphized to a first depth;
- implanting the top surface of the amorphized substrate with substitutional ions to a second depth smaller than the first depth;
- annealing the amorphized substrate to recrystallize the substrate thereby substituting the substitutional ions at least partly into the substrate, and
- after recrystallization of the amorphized substrate, implanting the top surface with dopant ions,
- wherein annealing the amorphized substrate is performed such that the amorphized substrate is completely recrystallized.
A method of manufacturing a semiconductor device, comprising:
- providing a crystalline substrate with its top surface amorphized to a first depth;
- implanting the top surface of the amorphized substrate with substitutional ions to a second depth substantially smaller than the first depth;
- and
- after the implanting with substitutional ions, annealing the amorphized substrate to recrystallize the substrate thereby substituting the substitutional ions at least partly into the substrate.
A semiconductor device, comprising:
- end-of-range defects at a first depth from the top surface of a substrate;
- and
- substitutional ions at least in part of the top surface at a second depth from the top surface of the substrate, the second depth substantially smaller than the first depth.
Dependencies are inferred from the claim text.