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US 7,582,546 B2Granted
Device with damaged breakdown layer
AssigneeInfineon Technologies AG
InventorsRonald Kakoschke, Thomas Nirschl
Life of this patent
Estimating the term…
Abstract
A device utilizing a breakdown layer in combination with a programmable resistance material, a phase-change material or a threshold switching material. The breakdown layer having damage.
Claims44
A method, comprising:
- forming a conductive material;
- forming a phase-change material;
- forming a breakdown layer, said breakdown layer being between said conductive material and said phase-change material;
- and
- uniformly ion implanting said breakdown layer.
2 more elements
A method, comprising:
- forming a conductive material;
- forming a threshold switching material, said threshold switching material not being a phase-change material;
- forming a breakdown layer, said breakdown layer being between said conductive material and said threshold switching material;
- and
- ion implanting said breakdown layer.
2 more elements
A device, comprising:
- a conductive layer;
- a programmable resistance material;
- and
- a breakdown layer between said conductive layer and said programmable resistance material, said breakdown layer being uniformly ion implanted.
1 more element
A device, comprising:
- a conductive layer;
- a threshold switching material, said threshold switching material not being a phase-change material;
- and
- a breakdown layer between said threshold switching material and said second conductive layer, said breakdown layer being ion implanted.
1 more element
A method of making a semiconductor device, comprising:
- forming a conductive material;
- forming a programmable resistance material;
- forming a breakdown layer, said breakdown layer being between said conductive material and said programmable resistance material;
- and
- ion implanting said breakdown layer, said ion implanting being perpendicular to a semiconductor substrate of said device.
2 more elements
A method of making a semiconductor device, comprising:
- forming a conductive material;
- forming a programmable resistance material;
- forming a breakdown layer, said breakdown layer being between said conductive material and said programmable resistance material;
- and
- uniformly increasing the reliability of breakdown of said breakdown layer.
2 more elements
Dependencies are inferred from the claim text.