ALD film forming method
AssigneeTokyo Electron Limited
InventorsIsao Gunji, Yumiko Kawano
Life of this patent
Estimating the term…
Abstract
A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.
Claims19
A film forming method for depositing a film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, the method comprising:
- an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber;
- and
- a reaction process for carrying out, after the adsorption process, a film forming reaction by supplying thermal energy to the film forming material adsorbed on the substrate by an energy transfer gas introduced into the processing chamber,
- wherein the adsorption process is performed while controlling a temperature of the substrate mounted on the mounting table to a level which allows the film forming material to be adsorbed on the substrate, and the level of the temperature is between −20° C. and 100° C.
A film forming apparatus comprising:
- a processing chamber, accommodating therein a substrate, for performing a film forming process;
- a mounting table for mounting thereon the substrate in the processing chamber;
- a source gas inlet for introducing a source gas into the processing chamber;
- an energy transfer gas inlet for injecting an energy transfer gas toward a surface of the substrate mounted on the mounting table in the processing chamber;
- and
- a gas discharge port connected with a gas exhaust unit for vacuum exhausting an inside of the processing chamber,
- wherein the source gas inlet and the gas discharge port are disposed such that the introduced source gas flows in a direction parallel to a surface of the substrate mounted on the mounting table before being exhausted, and
- wherein the mounting table includes a temperature control unit for controlling a temperature of the substrate mounted thereon to a level which allows the source gas to be adsorbed on the substrate and the level of the temperature is between −20° C. and 100° C.
A film forming apparatus comprising:
- a processing chamber, accommodating therein a substrate, for performing a film forming process;
- a mounting table for mounting thereon the substrate in the processing chamber;
- a source gas inlet for introducing a source gas into the processing chamber;
- an energy transfer gas inlet for injecting an energy transfer gas toward a surface of the substrate mounted on the mounting table in the processing chamber;
- and
- a gas discharge port connected with a gas exhaust unit for vacuum exhausting an inside of the processing chamber,
- wherein the source gas inlet and the gas discharge port are disposed such that the introduced source gas flows in a direction of colliding against the surface of the substrate mounted on the mounting table before being exhausted, and
- wherein the mounting table includes a temperature control unit for controlling a temperature of the substrate mounted thereon to a level which allows the source gas to be adsorbed on the substrate, the level of the temperature is between −20° C. and 100° C.
Dependencies are inferred from the claim text.