Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKeum-Joo Lee, Jin-Hye Bae, Dae-Keun Kang
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Abstract
The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water, and a second cleaning solution including ozone (O3) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.
Claims18
A method of removing contaminates from a structure of a semiconductor device, wherein said structure comprises a metal, said method comprising:
- cleaning said device with a first cleaning solution, said first cleaning solution comprising a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water;
- cleaning said device with a second cleaning solution, said second cleaning solution comprising ozone (O3) water or hydrogen fluoride (HF);
- and
- forming an oxide layer on the semiconductor substrate and a sidewall of the gate pattern by reoxidizing after cleaning with the second cleaning solution, wherein the reoxidizing is carried out by using plasma,
- whereby contaminants are removed from said structure of said semiconductor device.
A method of manufacturing a semiconductor device, comprising:
- forming an insulation layer and a conductive layer on a semiconductor substrate;
- forming a gate pattern, said gate pattern comprising a metal, by sequentially etching the conductive layer and the insulation layer, the gate pattern comprising an insulation layer pattern and a conductive layer pattern;
- cleaning said device with a first cleaning solution, said first cleaning solution comprising a mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and deionized (DI) water;
- cleaning said device with a second cleaning solution, said second cleaning solution comprising ozone (O3) water or hydrogen fluoride (HF);
- and
- forming an oxide layer on the semiconductor substrate and a sidewall of the gate pattern by reoxidizing after cleaning with the second cleaning solution, wherein the reoxidizing is carried out by using plasma,
- to thereby manufacture said semiconductor device.
Dependencies are inferred from the claim text.