Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same

A Heterojunction bipolar transistor (HBT) comprising:

• a substrate;
• a sub-collector supported by the substrate;
• an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector;
• an As-based nucleation layer partially supported by the un-doped layer;
• a collector layer supported by the As-based nucleation layer;
• a base layer supported by the collector layer;
• an emitter layer and a base contact supported by the base layer;
• an emitter cap layer supported by the emitter layer;
• an emitter contact supported by the emitter cap layer;
• and
• a collector contact supported by the sub-collector.

A method for forming a Heterojunction bipolar transistor (HBT), the method comprising:

• selecting a substrate;
• forming a sub-collector on the substrate;
• forming an un-doped layer on the sub-collector;
• performing ion implantation of Si on a portion of the un-doped layer;
• annealing the ion implanted un-doped layer for implant activation and damage removal;
• performing an in-situ cleaning with reactive hydrogen of the un-doped layer, wherein reactive hydrogen is created by thermal decomposition, electron bombardment or radio frequency (RF) plasma assisted decomposition of hydrogen;
• forming a collector layer on the ion implanted un-doped layer so that the in-situ cleaning with reactive hydrogen reduces interface charge between the un-doped layer and the collector layer;
• forming a base layer on the collector layer;
• forming an emitter layer on the base layer;
• forming an emitter cap layer on the emitter layer;
• forming an emitter contact on the emitter cap layer;
• forming a base contact on the base layer;
• and
• forming a collector contact on the sub-collector.