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US 7,582,534 B2Granted
Chemical doping of nano-components
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Phaedon Avouris, Jia Chen, Christian Klinke, Christopher B. Murray, Dmitri V. Talapin
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Abstract
A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.
Claims23
A method of forming a field effect transistor (FET), comprising:
- (a) providing a gate;
- (b) forming a gate dielectric on the gate;
- (c) forming a channel comprising a nano-component on the gate dielectric;
- (d) forming a source over a first region of the nano-component;
- (e) forming a drain over a second region of the nano-component;
- and
- (f) exposing at least one portion of the nano-component to a dopant selected from the group of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane and polyaniline and further comprising, prior to the step (f), the steps of:
- (g) providing a dielectric layer on the nano-component;
- (h) providing a gate material layer on the dielectric layer;
- (i) patterning the gate material layer to form a top gate;
- and
- (j) patterning the dielectric layer by using the top gate as a mask.
9 more elements
Dependencies are inferred from the claim text.