Method for fabricating capacitor of semiconductor memory device using amorphous carbon

A method of fabricating a semiconductor device, comprising:

• forming an inter-layer insulation layer on a substrate;
• forming a plurality of storage node contact plugs penetrating into the inter-layer insulation layer;
• forming a stack structure formed by stacking a first protective barrier layer and a sacrificial layer on the inter-layer insulation layer, wherein the first protective barrier layer is formed by using amorphous carbon;
• performing an etching process to the first protective barrier layer and the sacrificial layer in a manner to have trenches opening upper portions of the storage node contact plugs;
• forming a plurality of storage nodes having a cylinder type inside of the trenches;
• forming a second protective barrier layer filling the inside of the storage nodes having the cylinder type;
• removing the sacrificial layer through performing a wet dip-out process;
• removing the first protective barrier layer and the second protective barrier layer;
• and
• sequentially forming a dielectric layer and a plate node on the storage nodes.