Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes

A method for growing carbon nanotubes comprising:

• (a) providing a catalyst supporting substrate, wherein said catalyst supporting substrate including:
• a first region which is formed on a substrate,
• said first region including a catalyst supporting portion containing a first material;
• said first material including a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof, an upper portion of the first region being oxidized or hydroxylated to form the catalyst supporting portion, and
• a second region which is formed covering a part of said first region;
• said second region including a catalyst portion containing a second material which is different from said first material,
• said second material is a catalyst which grows carbon nanotubes in a vapor phase;
• and
• (b) growing said carbon nanotubes by supplying raw material gas containing carbon to the catalyst supporting substrate.

A method for manufacturing a transistor comprising:

• (a) forming a catalyst containing film, which is patterned with a predetermined shape, on a semiconductor substrate, wherein said catalyst containing film includes:
• a first region which is formed on a substrate,
• said first region including a catalyst supporting portion containing a first material;
• said first material including a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof, an upper portion of the first region being oxidized or hydroxylated to form the catalyst supporting portion, and
• a second region which is formed covering a part of said first region;
• said second region including a catalyst portion containing a second material which is different from said first material,
• said second material is a catalyst which grows carbon nanotubes in a vapor phase,
• (b) growing said carbon nanotubes in the direction along a surface of said semiconductor substrate by supplying raw material gas containing carbon to said catalyst containing substrate;
• (c) forming a first electrode which is connected to a part of said catalyst containing film side of said carbon nanotubes and a second electrode which is connected to a part of another side of said carbon nanotubes;
• and
• (d) forming a gate electrode which applies a voltage to said carbon nanotubes between said first electrode and said second electrode.