CMOS image sensor and method for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorChang Hun Han
Life of this patent
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Abstract
A CMOS image sensor and a method for manufacturing the same are provided, in which a nitride layer for passivation is used as a microlens to reduce topology. The CMOS image sensor includes an upper metal layer partially deposited on a dielectric layer; a first nitride layer deposited on the upper metal layer; an undoped silicon glass layer deposited on the first nitride layer and polished by chemical-mechanical polishing; color filter array elements deposited and exposed on the undoped silicon glass layer and polished by the chemical-mechanical polishing; and a second nitride layer deposited on the first nitride layer and the color filter array elements and transfer-etched after forming a sacrificial microlens on the second nitride layer.
Claims4
A method for manufacturing a CMOS image sensor, comprising:
- partially depositing an upper metal layer on a dielectric layer;
- depositing a first nitride layer on the upper metal layer;
- patterning the upper metal layer and the first nitride layer;
- forming patterns of an undoped silicate glass layer by depositing the undoped silicate glass layer on the patterned first nitride layer;
- depositing color filter array elements between adjacent patterns of the undoped silicate glass layer and exposing the color filter array elements;
- removing the undoped silicate glass layer deposited on the first nitride layer and portions of the color filter array elements higher than the first nitride layer by chemical-mechanical polishing;
- depositing a second nitride layer after performing the chemical-mechanical polishing;
- forming a sacrificial microlens on the second nitride layer;
- and
- shaping the second nitride layer as the sacrificial microlens by a transfer etching that exposes portions of the first nitride layer.
Dependencies are inferred from the claim text.