Method for manufacturing back side illumination image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorsJoon Hwang, Hee Sung Shim
Life of this patent
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Abstract
Provided are methods for manufacturing a back side illumination image sensor. In one method, an ion implantation layer is formed in an entire region of a front side of a first substrate. A device isolation region is formed in the front side of the first substrate to define a pixel region. A light sensing unit and a readout circuitry are formed in the pixel region. An interlayer insulating layer and a metal line are formed on the first substrate. A second substrate is bonded to the front side of the first substrate on which the metal line is formed. A lower side of the first substrate under the ion implantation region is removed such that the light sensing unit is available at the backside of the first substrate.
Claims20
A method for manufacturing a back side illumination image sensor, comprising:
- forming an ion implantation layer in a region of a front side of a first substrate;
- forming a device isolation region in the front side of the first substrate to define a pixel region;
- forming a light sensing unit and a readout circuitry in the pixel region;
- forming an interlayer insulating layer and a metal line on the first substrate;
- bonding a second substrate to the front side of the first substrate on which the metal line is formed;
- and
- removing a lower side of the first substrate under the ion implantation region.
A method for manufacturing a back side illumination image sensor, comprising:
- forming an ion implantation layer in a region of a front side of a first substrate;
- forming a light sensing unit in the front side of the first substrate;
- forming a readout circuitry on the front side of the first substrate;
- forming an interlayer insulating layer and a metal line on the front side of the first substrate;
- bonding a second substrate to the front side of the first substrate;
- and
- removing a lower side of the first substrate under the ion implantation region.
Dependencies are inferred from the claim text.