Reference pH sensor, preparation and application thereof
AssigneeNational Yunlin University of Science and Technology
InventorsJung-Chuan Chou, Diing-Jia Tzeng
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Abstract
A reference pH sensor, the preparation and application thereof. The reference pH sensor is an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a solid-state conductive sensing layer on the substrate, and a polypyrrole layer on the solid-state conductive sensing layer, and a metal wire connecting the MOSFET and the sensing unit.
Claims10
A preparation method of a reference pH sensor which is an extended gate ion-sensitive field effect transistor structure, the method comprising the steps of:
- providing an extended gate ion sensitive field effect transistor comprising an extended gate region;
- forming a solid-state conductive layer on the extended gate region, wherein solid-state conductive layer is ruthenium oxide;
- forming a polypyrrole layer on the solid-state conductive layer by electrochemical polymerization, wherein the electro-polymerization comprises the steps of:
- immersing the extended gate region in an electro-polymerizing solution;
- connecting the extended gate region to a positive electrode of a power supply;
- connecting a platinum electrode to a negative electrode of the power supply;
- and providing a constant potential from the power supply to perform the electrochemical polymerization;
- and
- packaging the extended gate region with an insulating layer.
Dependencies are inferred from the claim text.