Photo sensor and a method for manufacturing thereof

A method of manufacturing photo sensor, comprising:

• providing a substrate having a switching element region and an electronic element region;
• forming a gate on the switching element region of the substrate;
• forming a gate dielectric layer, a semiconductor layer, and an electrical property enhancement layer in sequence to cover the gate and the substrate;
• patterning the electrical property enhancement layer and the semiconductor layer to form a channel region on the gate dielectric layer above the gate;
• forming a first conductive layer, a plurality of element function layers and a second conductive layer in sequence to cover the gate dielectric layer and the channel region;
• patterning the second conductive layer and the element function layers wherein the element function layers patterned form a diode stack on the first conductive layer of the electronic element region, and the second conductive layer patterned forms a photoelectrode on the diode stack;
• patterning the first conductive layer to form a source/drain above the opposite sides of the channel region and expose a part of the electrical property enhancement layer;
• forming a insulating layer to cover the source/drain, the diode stack and the photoelectrode wherein the material of the insulating layer is a photoresist;
• patterning the insulating layer to form an opening in the insulating layer and the opening exposes the photoelectrode;
• forming a third conductive layer to cover the insulating layer and the photoelectrode;
• and
• patterning the third conductive layer so that the third conductive layer patterned covers a part of the insulating layer above the source/drain and connects to one side of the photoelectrode near the source/drain along the opening.