Multilayer photoresist systems
AssigneeRohm and Haas Electronic Materials LLC
InventorsJames F. Cameron, Dana A. Gronbeck, George G. Barclay
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Abstract
Multilayer photoresist systems are provided. In particular aspects, the invention relates to underlayer composition for an overcoated photoresist, particularly an overcoated silicon-containing photoresist. Preferred underlayer compositions comprise one or more resins or other components that impart etch-resistant and antireflective properties, such as one or more resins that contain phenyl or other etch-resistant groups and anthracene or other moieties that are effective anti-reflective chromophores for photoresist exposure radiation.
Claims3
A method for forming a photoresist relief image comprising:
- a) applying an organic underlayer composition coating layer on a substrate, the underlayer composition comprising (i) a first resin that comprises phenol groups;
- (ii) a second acrylate resin that is distinct from the first resin and comprises one or more anthracene groups;
- (iii) a crosslinker component that is distinct from the first resin and second resin, the crosslinker comprising a benzoquanamine compound or a melamine compound;
- and (iv) an acid or acid generator compound;
- b) applying a positive-acting photoresist composition coating layer over the underlayer composition, the photoresist composition comprising a photoactive component and one or more resins that comprise Si groups, phenolic groups and photoacid-labile groups;
- and
- c) exposing the photoresist layer to radiation having a wavelength of about 248 nm.
Dependencies are inferred from the claim text.