Electron emission device having openings with improved aspect ratio and method of manufacturing
AssigneeSamsung SDI Co., Ltd.
InventorsKyung-Sun Ryu, Seong-Yeon Hwang
Life of this patent
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Abstract
In a method of manufacturing an electron emission device, cathode electrodes are first formed on a substrate. An insulating layer is formed on the entire surface of the substrate such that the insulating layer covers the cathode electrodes. The insulating layer is wet-etched two or more times such that openings each with an aspect ratio of more than 1 are formed in the insulating layer. Gate electrodes are formed on the insulating layer. Electron emission regions are formed on the cathode electrodes within the openings of the insulating layer. The respective etchings are conducted using separate mask patterns with the same-sized openings such that under-cuts are made.
Claims16
A method of manufacturing an electron emission device, the method comprising:
- (a) forming cathode electrodes on a substrate;
- (b) forming an insulating layer on the substrate such that the insulating layer covers the cathode electrodes;
- (c) forming a mask pattern on the insulating layer;
- (d) wet-etching the insulating layer;
- (e) removing the mask pattern;
- (f) repeating (c) through (e) two or more times such that openings each with an aspect ratio of more than 1 are formed in the insulating layer;
- (g) forming gate electrodes on the insulating layer;
- and
- (h) forming electron emission regions on the cathode electrodes within the openings of the insulating layer.
A method of manufacturing an electron emission device, the method comprising:
- (a) forming cathode electrodes on a substrate;
- (b) forming an insulating layer on the substrate such that the insulating layer covers the cathode electrodes;
- (c) forming a first mask pattern with openings on the insulating layer;
- (d) first etching portions of the insulating layer exposed through the openings of the first mask pattern by wet etching and removing the first mask pattern;
- (e) forming a second mask pattern on the insulating layer, the second mask pattern having openings with a same size as the openings of the first mask pattern;
- (f) second etching portions of the insulating layer exposed through the openings of the second mask pattern by wet etching and removing the second mask pattern;
- (g) forming a third mask pattern on the insulating layer, the third mask pattern having openings with the same size as the openings of the first mask pattern;
- (h) third etching portions of the insulating layer exposed through the openings of the third mask pattern by wet etching and removing the third mask pattern;
- (i) forming gate electrodes on the insulating layer;
- and
- (j) forming electron emission regions on the cathode electrodes within openings of the insulating layer formed by the etchings.
Dependencies are inferred from the claim text.