Method of cleaning reaction chamber using substrate having catalyst layer thereon
AssigneeSamsung Electronics Co., Ltd.
InventorsSeok-Jun Won, Weon-Hong Kim, Min-Woo Song
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Abstract
A method of cleaning a reaction chamber using a substrate having a metal catalyst thereon is disclosed. The method includes preparing a substrate having a catalyst layer to activate a cleaning gas. The substrate is introduced into the reaction chamber. Next, a cleaning gas is introduced into the reaction chamber. Contaminations in the reaction chamber are exhausted. The substrate having a metal catalyst layer is also disclosed.
Claims23
A method of cleaning a contamination layer from a reaction chamber during a dedicated cleaning process, the contamination layer comprising a thicker portion and a thinner portion, the method comprising:
- prior to the dedicated cleaning process, placing a substrate having a metal catalyst layer adapted to activate a cleaning gas into the reaction chamber, wherein the metal catalyst layer comprises more dense catalyst patterns formed on a first region of the substrate facing the thicker portion of the contamination layer, and less dense catalyst patterns formed on a second region of the substrate facing the thinner portion of the contamination layer;
- during the dedicated cleaning process, introducing the cleaning gas into the reaction chamber;
- and
- exhausting contaminates from the reaction chamber.
A method of cleaning a contamination layer from the interior of a reaction chamber comprising an upper electrode opposing a susceptor, the contamination layer comprising a thicker portion and a thinner portion, and the method comprising:
- placing a substrate on the susceptor, wherein an upper surface the substrate, consists of a metal catalyst layer adapted to activate a cleaning gas, wherein the metal catalyst layer comprises more dense catalyst patterns formed on a first region of the substrate facing the thicker portion of the contamination layer, and less dense catalyst patterns formed on a second region of the substrate facing the thinner portion of the contamination layer;
- introducing the cleaning gas into a space between the upper electrode and the susceptor through at least one gas inlet installed in a wall of the reaction chamber;
- and
- exhausting contaminates from the reaction chamber using at least one vacuum pump system.
A method of cleaning a contamination layer from the interior of a reaction chamber the contamination layer comprising a thicker portion and a thinner portion, the method comprising:
- placing a substrate having a metal catalyst layer adapted to activate a cleaning gas into the reaction chamber, wherein the metal catalyst layer comprises more dense catalyst patterns formed on a first region of the substrate facing the thicker portion of the contamination layer, and less dense catalyst patterns formed on a second region of the substrate facing the thinner portion of the contamination layer;
- introducing the cleaning gas into the reaction chamber;
- and
- exhausting contaminates from the reaction chamber.
A method of cleaning a contamination layer from a reaction chamber during a dedicated cleaning process chamber, the contamination layer comprising a thicker portion and a thinner portion, the method comprising:
- prior to the dedicated cleaning process, placing a substrate having a metal catalyst layer adapted to activate a cleaning gas into the reaction chamber, wherein the metal catalyst layer comprises first metal catalyst patterns formed on a first region of the substrate facing the thicker portion of the contamination layer, and second metal catalyst patterns formed on a second region of the substrate facing the thinner portion of the contamination layer,
- wherein a width of the first metal catalyst patterns is greater than a width of the second metal catalyst pattern;
- during the dedicated cleaning process, introducing the cleaning gas into the reaction chamber;
- and
- exhausting contaminates from the reaction chamber.
Dependencies are inferred from the claim text.