Method for manufacturing a dielectric element

#1. Field of the Invention

#The present invention relates to a dielectric element such as a thin film capacitor, and a method for manufacturing the same.

#2. Related Background Art

#FIG. 1 is a process drawing showing a manufacturing method of a dielectric element according to an embodiment.

#FIG. 2 is a diagram showing the electric characteristics of a dielectric element having a Cu upper electrode and a dielectric film formed by the MOD method.

#FIG. 3 is a diagram showing the electric characteristics of a dielectric element having a Ni upper electrode and a dielectric film formed by the MOD method.

#Embodiments of the present invention will be described below in detail with reference to accompanied drawings. In the description of drawings, the same symbols are attached to the same components and the duplicated description will be omitted.

#FIG. 1 is a process drawing showing a manufacturing method of a dielectric element according to an embodiment. As shown in FIG. 1(a), a metallic foil is prepared first as a lower electrode 12. The metallic foil is self-supportable and therefore it can be used as a substrate for supporting a dielectric film 14 and an upper electrode 16 to be described later.

#Next, a first laminated structure 15 is fabricated by forming the dielectric film 14 on the lower electrode 12 (refer to FIG. 1(b)). The dielectric film 14 can be formed by an arbitrary method such as a chemical solution method and a sputtering method. An example of the chemical solution method is a metal organic decomposition (MOD) method.