Method for monitoring and calibrating temperature in semiconductor processing chambers
AssigneeApplied Materials, Inc.
InventorsJallepally Ravi, Maitreyee Mahajani, Yi-Chiau Huang
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Abstract
The present invention provides a non-destructive method for monitoring and calibrating chamber temperature. One embodiment of the present invention provides a method for measuring temperature comprising forming a target film on a test substrate at a first temperature, wherein the target film has one or more properties responsive to thermal exposure, exposing the target film to an environment at a second temperature in a range higher than the first temperature, measuring the one or more properties of the target film after exposing the target film to the environment at the second temperature, and determining the second temperature according to the measured one or more properties.
Claims23
A method for measuring temperature, comprising:
- forming a target film on a test substrate at a first temperature, wherein the target film has one or more properties responsive to thermal exposure;
- exposing the target film to an environment at a second temperature in a range higher than the first temperature;
- measuring the one or more properties of the target film after exposing the target film to the environment at the second temperature;
- and
- determining the second temperature according to the measured one or more properties.
A method for measuring processing temperature of a process performed in a semiconductor processing chamber, comprising:
- depositing a target film on a test substrate, wherein one or more properties of the target film are responsive to thermal exposure;
- positioning the test substrate in the semiconductor processing chamber;
- performing a test process to the test substrate positioned in the semiconductor processing chamber, wherein the test process has substantially the same temperature settings as the process;
- obtaining values of the one or more properties of the target film after the test process;
- and
- determining temperature of the test process performed according to the obtained values of the one or more properties of the target film after the test process.
A method for measuring temperature, comprising:
- depositing a silicon dioxide film on a test substrate at a first temperature, wherein the silicon dioxide film has one or more properties responsive to thermal exposure;
- exposing the silicon dioxide film to an inert environment at a second temperature, wherein the second temperature is higher than the first temperature;
- obtaining values of the one or more properties of the silicon dioxide film to the inert environment at the second temperature;
- determining the second temperature according to obtained values of the one or more properties of the silicon dioxide film.
Dependencies are inferred from the claim text.