Semiconductor device with NMOS transistors arranged continuously
AssigneeNEC Electronics Corporation
InventorFumiaki Suzuki
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Abstract
A semiconductor device includes a plurality of PMOS transistors formed on a semiconductor substrate; and a plurality of NMOS transistors formed on the semiconductor substrate. The plurality of PMOS transistors are electrically isolated from each other by a device isolation structure formed in the semiconductor substrate. The plurality of NMOS transistors are continuously formed in a first direction such that a sequence of N-type diffusion layers of the plurality of NMOS transistors extends in the first direction. One of the plurality of PMOS transistors and one of the plurality of NMOS transistors share a gate electrode.
Claims14
A semiconductor device comprising:
- a plurality of PMOS transistors formed on a semiconductor substrate;
- a plurality of NMOS transistors formed on said semiconductor substrate;
- and
- a gate structure formed on said semiconductor substrate between an adjacent of said plurality of NMOS transistors to extend in a second direction perpendicular to a first direction over an N-type diffusion layer,
- wherein said plurality of PMOS transistors are surrounded and electrically isolated from each other by a device isolation structure formed in said semiconductor substrate,
- wherein said plurality of NMOS transistors are adjacent to each other and surrounded by said device isolation structure in said first direction such that said N-type diffusion layer of said plurality of NMOS transistors extends continuously with respect to said plurality of NMOS transistors in said first direction, and
- wherein one of said plurality of PMOS transistors and one of said plurality of NMOS transistors share a gate electrode.
Dependencies are inferred from the claim text.