Long wavelength vertical cavity surface emitting lasers
AssigneeFinisar Corporation
InventorsTzu-Yu Wang, Jin K. Kim
Life of this patent
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Abstract
A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.
Claims23
A vertical cavity surface emitting laser (VCSEL), comprising:
- a first distributed Bragg reflector (DBR);
- a second DBR, wherein the second DBR includes a first optical aperture and a current aperture, wherein the second DBR further includes a second optical aperture, the second optical aperture including an intracavity optical confinement structure;
- an active region between the first and second DBRs;
- and
- a dielectric structure directly contacting the second DBR,
- wherein the first optical aperture and the dielectric structure are formed such that the dielectric structure covers an upper surface of the first optical aperture and at least partially covers one or more sidewalls of the first optical aperture.
A vertical cavity surface emitting laser (VCSEL), comprising:
- a first distributed Bragg reflector (DBR);
- a second DBR, wherein the second DBR includes a first optical aperture and a current aperture;
- an active region between the first and second DBRs;
- and
- a dielectric structure directly contacting the second DBR,
- wherein the first optical aperture and the dielectric structure are formed such that the dielectric structure covers an upper surface of the first optical aperture and at least partially covers one or more sidewalls of the first optical aperture, wherein the dielectric structure includes a dielectric DBR.
A method of forming a vertical cavity surface emitting laser (VCSEL), comprising:
- forming a first distributed Bragg reflector (DBR) over a substrate;
- forming an active region over the first DBR;
- forming a second DBR over the active region;
- forming a current aperture within the second DBR;
- forming an optical aperture from the second DBR;
- and
- forming a dielectric structure over the optical aperture such that the dielectric structure radially surrounds, at least in part, one or more sidewalls of the first optical aperture that extend parallel to an optical axis of the first optical aperture, wherein forming the dielectric structure includes forming a dielectric DBR.
Dependencies are inferred from the claim text.