Semiconductors and electronic devices generated therefrom
AssigneeXerox Corporation
InventorsYiliang Wu, Ping Liu, Beng S. Ong
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Abstract
An electronic device containing a polymer of Formula (I), Formula (II), or mixtures, or isomers thereof wherein each R1 through R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.
Claims33
An electronic device comprising a semiconductor selected from the group consisting of at least one of Formula (I), Formula (II), or mixtures thereof
- wherein each R1 through R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano;
- a and b represent the number of rings;
- and n represents the number of repeating groups or moieties.
A thin film transistor comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprised of at least one semiconducting component having one of the following formulas:
- wherein each R1 through R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano;
- a and b represent the number of rings;
- and n represents the number of repeating groups or moieties.
An electronic device comprising a semiconductive component and wherein said device is a thin film transistor, and said component is selected from the group consisting of Formula (I), Formula (II), and mixtures thereof
- wherein at least one of R1 to R10 is a suitable hydrocarbon;
- a and b represent the number of rings;
- and n represents the number of repeating units.
Dependencies are inferred from the claim text.