Multiwavelength semiconductor laser array and method of fabricating the same
AssigneeIndustrial Technology Research Institute
InventorsKuo-Jui Lin, Tung-Wei Chi, Kun-Feng Lin, Chih-Ming Lai
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Abstract
A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.
Claims13
A multiwavelength semiconductor laser array, applicable for generating lasers of multiple wavelengths under a bias current, comprising:
- a substrate;
- and
- a plurality of laser resonators, formed on the substrate and having a plurality of corresponding resonant cavities, wherein each of the laser resonators comprises an active region for generating a single-wavelength band laser, the active region is formed by alternately stacking a plurality of quantum dot layers and a plurality of quantum dot capping layers, and the laser resonators have at least two different cavity lengths;
- wherein the active region comprises a plurality of spacer layers, the quantum dot layer is sandwiched between the spacer layer and the quantum dot capping layer to form a periodic structure unit;
- and
- wherein the active region further comprises a plurality of wave band regions for generating different emission wavelengths, and the wave band regions are formed by stacking a plurality of periodic structure units.
Dependencies are inferred from the claim text.