Atomic layer deposition using metal amidinates
AssigneePresident and Fellows of Harvard College
InventorsRoy G. Gordon, Booyong S. Lim
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Abstract
Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) N,N′-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N′-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
Claims19
A composition of matter that is a volatile metal(III) tris(amidinate) represented by the general formula
- or oligomers thereof, wherein the metal M″ is selected from lanthanum, praseodymium and the other lanthanide metals, yttrium, scandium, titanium, vanadium, chromium, iron, ruthenium, cobalt, rhodium, iridium, and bismuth, and wherein R1, R1′, R1″, R2, R2′, and R2″ independently represent alkyl groups, alkenyl groups, alkynyl groups, trialkylsilyl groups, or other non-metal atoms or groups that are not aryl, and R3, R3′, and R3″ independently represent hydrogen, alkyl groups, alkenyl groups, alkynyl groups, trialkylsilyl groups, or other non-metal atoms or groups that are not aryl.
Dependencies are inferred from the claim text.