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AssigneeSamsung Electronics Co., Ltd.
InventorsUu-Byung Kang, Yong-Hwan Kwon, Jong-Ho Lee, Chung-Sun Lee
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Example embodiments of the present invention relate to an alloy solder and a semiconductor device using the alloy solder. Other example embodiments relate to an alloy solder capable of increasing reliability of a junction between a semiconductor chip and a substrate. According to still In still other example embodiments of the present invention, there may be a tin-bismuth (Sn—Bi) family alloy solder between a semiconductor chip and a substrate, and a semiconductor device using the alloy solder. The semiconductor device may include a semiconductor chip formed with a plurality of gold bumps, a substrate having metal wirings connected to the gold bumps, and a junction including a tin-bismuth family alloy solder interposed between and connecting the gold bump and the metal wiring.
A tin-bismuth (Sn—Bi) family alloy solder interposed between and connecting a gold (Au) bump of a semiconductor chip and metal wiring of a substrate, the alloy solder comprising tin (Sn) and bismuth (Bi), wherein the amount of bismuth (Bi) is about 20 wt %-about 55 wt % of the alloy solder wherein the gold (Au) bump and the alloy solder form an alloy layer containing AuSn2 as a main component.
A tin-bismuth (Sn—Bi) family alloy solder interposed between and connecting a gold (Au) bump of a semiconductor chip and metal wiring of a substrate, the alloy solder comprising about 20 -about 55 wt % of bismuth (Bi), tin (Sn), and below about 3 wt % of impurity, wherein the impurity is at least one selected from the group including silver (Ag), copper (Cu) and zinc (Zn).
Dependencies are inferred from the claim text.