Method of making a wafer level integration package

Abstract

A semiconductor package is made by providing a wafer having a first electrical contact pad integrated into a top surface of the wafer, forming a through-hole interconnection extending downward from a first surface of the first electrical contact pad, electrically connecting a die to a second surface of the first electrical contact pad, cutting the wafer to form a channel portion and a connecting portion, disposing an encapsulant over the die and the channel portion, backgrinding the wafer to remove the connecting portion and expose a surface of the through-hole interconnection, disposing a second electrical contact pad over the surface of the through-hole interconnection, disposing a dielectric layer along a side surface of the second electrical contact pad, and singulating the wafer into an individual segment containing the die. The dielectric layer is disposed to form a plurality of lands extending across a bottom surface of the semiconductor device.

Dependencies are inferred from the claim text.