High-power optically end-pumped external-cavity semiconductor laser
AssigneeSamsung Electronics Co., Ltd.
InventorsGi-bum Kim, Soo-haeng Cho, Taek Kim
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Abstract
A high-power optically end-pumped external-cavity semiconductor laser is provided having a laser chip including an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength; an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR; a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip; and a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser chip to focus a pumping beam to be incident on the second surface of the laser chip.
Claims20
A high-power optically end-pumped external-cavity semiconductor laser comprising:
- a laser chip comprising an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength;
- an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR;
- a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip;
- and
- a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser chip to focus a pumping beam to be incident on the second surface of the laser chip.
Dependencies are inferred from the claim text.